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翻訳と辞書　辞書検索 [ 開発暫定版 ] スポンサード リンク Hybrid-pi model ： ウィキペディア英語版 Hybrid-pi model The hybrid-pi model is a popular circuit model used for analyzing the small signal behavior of bipolar junction and field effect transistors. Sometimes it is also called Giacoletto model because it was introduced by L.J. Giacoletto in 1969.〔Giacoletto, L.J. "Diode and transistor equivalent circuits for transient operation" IEEE Journal of Solid-State Circuits, Vol 4, Issue 2, 1969 ()〕 The model can be quite accurate for low-frequency circuits and can easily be adapted for higher frequency circuits with the addition of appropriate inter-electrode capacitances and other parasitic elements. ==BJT parameters== The hybrid-pi model is a linearized two-port network approximation to the BJT using the small-signal base-emitter voltage, $\backslash scriptstyle\; v\_\backslash text$, and collector-emitter voltage, $\backslash scriptstyle\; v\_\backslash text$, as independent variables, and the small-signal base current, $\backslash scriptstyle\; i\_\backslash text$, and collector current, $\backslash scriptstyle\; i\_\backslash text$, as dependent variables.〔 〕 A basic, low-frequency hybrid-pi model for the bipolar transistor is shown in figure 1. The various parameters are as follows. :$g\_\backslash text\; =\; \backslash left.\backslash frac\}\backslash right\backslash vert\_\; =\; \backslash frac\}$ is the transconductance, evaluated in a simple model,〔 〕 where: * $\backslash scriptstyle\; I\_\backslash text\; \backslash ,$ is the quiescent collector current (also called the collector bias or DC collector current) * $\backslash scriptstyle\; V\_\backslash text\; ~=~\; \backslash frac$ is the ''thermal voltage'', calculated from Boltzmann's constant, $\backslash scriptstyle\; k$, the charge of an electron, $\backslash scriptstyle\; e$, and the transistor temperature in kelvins, $\backslash scriptstyle\; T$. At approximately room temperature (295K, 22°C or 71°F), $\backslash scriptstyle\; V\_\backslash text$ is about 25 mV. :$r\_\backslash pi\; =\; \backslash left.\backslash frac\}\backslash right\backslash vert\_\; =\; \backslash frac\}\; =\; \backslash frac$ is the DC (bias) base current. * $\backslash scriptstyle\; \backslash beta\_0\; ~=~\; \backslash frac\}\; \backslash ,$ is the current gain at low frequencies (generally quoted as ''h''fe from the h-parameter model). This is a parameter specific to each transistor, and can be found on a datasheet. * $\backslash scriptstyle\; r\_\backslash text\; ~=~\; \backslash left.\backslash frac\}\backslash right\backslash vert\_\; ~=~\; \backslash frac\; \backslash ,+\backslash ,\; V\_\backslash text\backslash right)\; ~\backslash approx~\; \backslash frac\}$ is the output resistance due to the Early effect ($\backslash scriptstyle\; V\_\backslash text$ is the Early voltage). 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Hybrid-pi model」の詳細全文を読む スポンサード リンク 翻訳と辞書 : 翻訳のためのインターネットリソース Copyright(C) kotoba.ne.jp 1997-2016. All Rights Reserved.